Transistor Biasing

21. The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 μA, then IC will change by __________

1. 100 μA
2. 25 μA
3. 20 μA
4. 50 μA

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22. The circuit that provides the best stabilization of operating point is __________

1. Base resistor bias
2. Collector feedback bias
3. Potential divider bias
4. None of the above

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23. The disadvantage of base resistor method of transistor biasing is that it __________

1. Is complicated
2. Is sensitive to changes in β
3. Provides high stability
4. None of the above

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24. The disadvantage of voltage divider bias is that it has __________.

1. High stability factor
2. Low base current
3. Many resistors
4. None of the above

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25. The leakage current in a silicon transistor is about __________ the leakage current in a germanium transistor

1. One hundredth
2. One tenth
3. One thousandth
4. One millionth

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26. The operating point __________ on the a.c. load line

1. Also line
2. Does not lie
3. May or may not lie
4. Data insufficient

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27. The operating point is also called the __________.

1. Cut off point
2. Quiescent point
3. Saturation point
4. None of the above

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28. The point of intersection of d.c. and a.c. load lines represents __________

1. Operating point
2. Current gain
3. Voltage gain
4. None of the above

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29. The purpose of resistance in the emitter circuit of a transistor amplifier is to __________.

1. Limit the maximum emitter current
2. Provide base-emitter bias
3. Limit the change in emitter current
4. None of the above

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30. The stabilisation of operating point in potential divider method is provided by __________

1. RE consideration
2. RC consideration
3. VCC consideration
4. None of the above

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